SC1936 Silicon Nitride Electrical Insulator, Si3N4

Catalog No.	SC1936
Color	Black
Density	3.21 g/cm3
Flexural strength	800 MPa
Fracture toughness	6.5 MPam 1/2
Thermal stress parameters	569 K

Silicon Nitride Electrical Insulator Description

Silicon nitride electrical insulator is a man-made composite product synthesized through several different chemical reaction methods. Due to the even performance in high temperature, Si3N4 ceramic is a commonly used ceramic material in the metallurgical industry. It has excellent thermal shock resistance due to the microstructure. The creep and oxidation resistance of Si3N4 is also superior, its low thermal conductivity and high wear resistance also make it an outstanding material that can withstand conditions of most industrial applications.

With low thermal conductivity and resistance to attack by many molten metals, Silicon nitride Si3N4 electrical insulator is used in many RF heating applications. Comparing to other conventional insulator materials, Si3N4 electrical insulator has higher strength and thermal shock resistance, which is also an ideal insulator for aerospace applications.

There are 5 different methods to produce silicon nitride ceramics including SRBSN, GPSN, HPSN, HIP-SN and RBSN, make the application and working material different slightly. In these 5 methods of production, GPSN is most commonly used to produce Si3N4 components.

Silicon Nitride Electrical Insulator Specifications

GPSN

Property
Color	Grey
Mechanical Properties
Density	3.21 g/cm3
Compressive Strength	3000 MPa
Flexural Strength	800 MPa
Weibull-Modulus m	15
Fracture Toughness KIc	6.5 MPa m^1/2
Young’s Modulus E	320 GPa
Poisson Ratio	0.28
Hardness Vickers (HV 1)	16 GPa
Thermal Properties
Maximum Temperature (Inert Gas)	1200°C
Maximum Temperature (Air)	1100°C
Thermal Conductivity @ 20°C	28 W/mK
Thermal Conductivity @ 1000°C	16 W/mK
Thermal Expansion (20–100°C)	2*10-6/K
Thermal Expansion (20–1000°C)	3.510-6/K
Thermal Shock parameter R1	600 K
Thermal Shock parameter R2	15 W/mm
Electrical Properties
Resistivity at 20°C	10^12 Ωcm
Resistivity at 800°C	10^7 Ωcm
Dielectric constant	6 MHz