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| Catalog No. | CY3435 |
| Material | AlN |
| Dimensions | 10×10 mm |
| Thickness | 450 ± 50μm |
| Density | 3.26g/cm3 |
AlN Single Crystal Substrate has the advantages of a wide bandgap, high breakdown electric field, high thermal conductivity, high electron saturation rate, and high radiation resistance. It has a bandgap of 6.2eV and a direct bandgap, which is an important blue and ultraviolet light-emitting material. It has high thermal conductivity, high melting point, high resistivity, strong breakdown field, and low dielectric coefficient. It is an excellent electronic material for high temperature, high frequency, and high-power devices. AlN oriented along the c-axis has very good piezoelectricity and high-speed propagation properties of surface acoustic waves, and is an excellent piezoelectric material for surface acoustic wave devices.
| Composition (Cubic) | AlN |
| Usable Area | ＞80% |
| Edge exclusion | 1.0 mm |
| Thermal Conductivity | >180W/(m·K) |
| XRD | FWHM (002)：<0>FWHM (102)：<0> |
| Absorption coefficient | < 30 cm-1 |
| Etch pit density (EPD) | < 105 cm-2 |
| Surface finish |
Al face: CMP polish (RMS < 0.8 nm) N face: optical polish (RMS < 3 nm) |
| Orientation | <0001>± 1° |
* Speed up the development of deep-ultraviolet light-emitting devices, new high-power radiofrequency devices
* Used in the semiconductor lighting, medical and health, biological testing, microwave communications, and other fields.
Our AlN Single Crystal Substrate is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
