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Compound Formula | SiC |
Molecular Weight | 40.1 |
Appearance | Black |
Melting Point | 2,730° C (4,946° F) (decomposes) |
Density | 3.0 to 3.2 g/cm3 |
Electrical Resistivity | 1 to 4 10x Ω-m |
Poisson’s Ratio | 0.15 to 0.21 |
Specific Heat | 670 to 1180 J/kg-K |
Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. It has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Silicon carbide is an excellent ceramic material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of applications including spray nozzles, shot blast nozzles and cyclone components.
Type |
Material |
Description |
Sintered Silicon Carbide (S-SiC) |
SMB1 Basic pure SiC |
Purity of SiC > 98% Hv: 26 GPa |
SMG1 Graphite impregnated |
15%~20% content of Graphite |
|
SMP1 Porous |
Better friction resistance |
|
Reaction Bonded Silicon Carbide (RB-SiC) |
SMB2 Basic SiC |
Purity of SiC > 88% |
SMG2 Graphite impregnated |
20%~30% content of Graphite |
-Silicon carbide can be applied in areas such as semiconductor and coating.
-Silicon carbide is an ideal material for pump gaskets.
ACM’s Silicon Carbide Gasket is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.