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| Compound Formula | SiC |
| Molecular Weight | 40.1 |
| Appearance | Black |
| Melting Point | 2,730° C (4,946° F) (decomposes) |
| Density | 3.0 to 3.2 g/cm3 |
| Electrical Resistivity | 1 to 4 10x Ω-m |
| Poisson's Ratio | 0.15 to 0.21 |
| Specific Heat | 670 to 1180 J/kg-K |
Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. It has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Silicon carbide is an excellent ceramic material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of applications including spray nozzles, shot blast nozzles and cyclone components.
| Recrystallized SiC | Sintered SiC | Reaction Bonded SiC | |
| Purity of Silicon Carbide | 99.5% | 98% | >88% |
| Max. Working Temp. (`C) | 1650 | 1550 | 1300 |
| Bulk Density (g/cm3) | 2.7 | 3.1 | >3 |
| Appearance Porosity | <15%> | 2.5 | 0.1 |
| Flexural strength (MPa) | 110 | 400 | 380 |
| Compressive strength (MPa) | >300 | 2200 | 2100 |
| Thermal expansion (10^-6/`C) | 4.6 (1200`C) | 4.0 (<500> | 4.4 (<500> |
| Thermal conductivity (W/m.K) | 35~36 | 110 | 65 |
| Main characteristics | High temp. High resistance. High purity |
Fracture Toughness | Chemical Resistance |
-Silicon carbide can be applied in areas such as semiconductor and coating.
-Our silicon carbide trays are widely used in LED industry.
ACM’s Silicon Carbide Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
